ISL73128RH Intersil Corporation, ISL73128RH Datasheet

ISL73128RH

Manufacturer Part Number

ISL73128RH

Description

(ISL73xxxRH) Ultra High Frequency NPN-PNP Transistor Array

Manufacturer

Intersil Corporation

Datasheet

1.ISL73128RH.pdf (5 pages)

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Radiation Hardened Ultra High Frequency

NPN/PNP Transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are

radiation hardened bipolar transistor arrays. The

ISL73096RH consists of three NPN transistors and two PNP

transistors on a common substrate. The ISL73127RH

consists of five NPN transistors on a common substrate. The

ISL73128RH consists of five PNP transistors on a common

substrate. One of our bonded wafer, dielectrically isolated

fabrication processes provides an immunity to Single Event

Latch-up and the capability of highly reliable performance in

any radiation environment.

The high gain-bandwidth product and low noise figure of

these transistors make them ideal for use in high frequency

amplifier and mixer applications. Monolithic construction of

the NPN and PNP transistors provides the closest electrical

and thermal matching possible. Access is provided to each

terminal of the transistors for maximum application flexibility.

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are

contained in SMD 5962-07218. A “hot-link” is provided

on our website for downloading.

Ordering Information

5962F0721801V9A

5962F0721801VXC

5962F0721802V9A

5962F0721802VXC

5962F0721803V9A

5962F0721803VXC

ISL73096RHF/PROTO

ISL73096RHX/SAMPLE

ISL73127RHF/PROTO

ISL73127RHX/SAMPLE

ISL73128RHF/PROTO

ISL73128RHX/SAMPLE

ORDERING NUMBER

Data Sheet

ISL73096RHVX

ISL73096RHVF

ISL73127RHVX

ISL73127RHVF

ISL73128RHVX

ISL73128RHVF

ISL73096RHF/PROTO

ISL73096RHX/SAMPLE

ISL73127RHF/PROTO

ISL73127RHX/SAMPLE

ISL73128RHF/PROTO

ISL73128RHX/SAMPLE

ISL73096RH, ISL73127RH, ISL73128RH

1-888-INTERSIL or 1-888-468-3774

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

INTERNAL MKT. NUMBER

Features

• Electrically Screened to SMD # 5962-07218

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Environment

• NPN Gain Bandwidth Product (F

• NPN Current Gain (h

• NPN Early Voltage (V

• PNP Gain Bandwidth Product (F

• PNP Current Gain (h

• PNP Early Voltage (V

• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)

• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)

• Complete Isolation Between Transistors

Applications

• High Frequency Amplifiers and Mixers

• High Frequency Converters

• Synchronous Detector

- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10

- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation

- Refer to Application Note AN9315

March 23, 2009

All other trademarks mentioned are the property of their respective owners..

Intersil (and design) is a registered trademark of Intersil Americas Inc.

) . . . . . . . . . . . . . . . . . . . 50V (Typ)

) . . . . . . . . . . . . . . . . . . . 20V (Typ)

). . . . . . . . . . . . . . . . . . . 130 (Typ)

). . . . . . . . . . . . . . . . . . . . 60 (Typ)

TEMP. RANGE (°C)

). . . . . . . . 5.5GHz (Typ)

) . . . . . . . . .8GHz (Typ)

-55 to +125

FN6475.2

RAD(Si)

Related parts for ISL73128RH

ISL73128RH Summary of contents

Page 1

... ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment ...

Page 2

... Pinouts ISL73096RH (16 LD FLATPACK) CDFP4-F16 TOP VIEW Q1B 1 2 Q1E www.datasheet4u.com 3 Q1C 4 Q2E 5 Q2B 6 Q2C 7 Q3E 8 Q3B 2 ISL73096RH, ISL73127RH, ISL73128RH 16 Q1C NC 15 Q5C Q2C 14 Q5B Q2E 13 Q5E Q2B 12 NC Q4C 11 Q4B Q3C 10 Q4E Q3E 9 Q3C Q3B ISL73128RH (16 LD FLATPACK) CDFP4-F16 TOP VIEW ...

Page 3

... Type: Metal 2: AlCu (2%) Å Thickness: Metal 2: 16k ±0.8k Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon Metallization Mask Layout 3 ISL73096RH, ISL73127RH, ISL73128RH ASSEMBLY RELATED INFORMATION: Substrate Potential: ADDITIONAL INFORMATION: Worst Case Current Density: Transistor Count: Å Å (3) Q2E (4) Q2B (5) NC (6) Q3C FIGURE 1 ...

Page 4

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 4 ISL73096RH, ISL73127RH, ISL73128RH (Continued) (2) Q2C (1) Q1C (16) Q1E (15) Q1B (7) Q3E (8) Q3B (9) Q4B (10) Q4E FIGURE 2. ISL73128RH (14) Q5B (13) Q5E (12) Q5C (11) Q4C FN6475.2 March 23, 2009 ...

Page 5

... Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when sol- der dip lead finish is applied. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH 5 ISL73096RH, ISL73127RH, ISL73128RH K16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE A SYMBOL ...

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