ISL97632 Intersil Corporation, ISL97632 Datasheet - Page 7

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ISL97632

Manufacturer Part Number
ISL97632
Description
White LED Driver
Manufacturer
Intersil Corporation
Datasheet

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Part Number
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Part Number:
ISL97632IRT26Z-T
Manufacturer:
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Quantity:
9 600
V
Applications
Efficiency Improvement
Figure 2 shows the efficiency measurements. The choice of
the inductor has a significant impact on the power efficiency.
As shown in Equation 4, the higher the inductance, the lower
the peak current therefore the lower the conduction and
switching losses. On the other hand, it has also a higher
series resistance. Nevertheless, the efficiency improvement
from lowering the peak current is greater than the impact of
the resistance increase with larger value of inductor.
Efficiency can also be improved for systems that have high
supply voltages. Since the ISL97632 can only supply from
2.4V to 5.5V, V
voltage for the boost circuit as shown in Figure 7 and the
efficiency improvement is shown in Figure 8.
8 LEDs Operation
For medium size LCDs that need more than 6 low power
LEDs for backlighting, such as a Portable Media Player or
Automotive Navigation Panel displays, the voltage range of
the ISL97632 is not sufficient. However, the ISL97632 can
be used as an LED controller with an external protection
IN
Vs = 12V
= 2.7V TO 5.5V
C1
FIGURE 7. SEPERATE HIGH INPUT VOLTAGE FOR HIGHER
FIGURE 8. EFFICIENCY IMPROVEMENT WITH 9V AND 12V
C2
90
85
80
75
70
0.1µ
0
EFFICIENCY OPERATION
INPUTS
IN
1
VIN
EN
SDIN
V
S
must be seperated from the high supply
ISL97632
5
= 12V
22µ
L1
FBSW
VOUT
GND
2
10
FB
LX
7
ILED (mA)
15
V
S
= 9V
20
C3
V
6 LEDs
L1 = 22µH
R1 = 4Ω
0.22µ
IN
R1
= 4V
25
D1
D2
D3
D4
D5
D6
30
25mA
ISL97632
MOSFET connected in cascode fashion to achieve higher
output voltage. A conceptual 8 LEDs driver circuit is shown
in Figure 9. A 60V logic level N-Channel MOSFET is
configured such that its drain ties between the inductor and
the anode of schottky diode, its gate ties to the input, and its
source ties to the ISL97632 LX node connecting to the drain
of the internal switch. When the internal switch turns on, it
pulls the source of M1 down to ground, and LX conducts as
normal. When the internal switch turns off, the source of M1
will be pulled up by the follower action of M1, limiting the
maximum voltage on the ISL97632 LX pin to below Vin, but
allowing the output voltage to go much higher than the
breakdown limit on the LX pin. The switch current limit and
maximum duty cycle will not be changed by this setup, so
input voltage will need to be carefully considered to make
sure that the required output voltage and current levels are
achievable. Because the source of M1 is effectively floating
when the internal LX switch is off, the drain-to-source
capacitance of M1 may be sufficient to capacitively pull the
node high enough to breaks down the gate oxide of M1. To
prevent this, VOUT should be connected to VIN, allowing the
internal schottky to limit the peak voltage. This will also hold
the VOUT pin at a known low voltage, preventing the built in
OVP function from causing problems. This OVP function is
effectively useless in this mode as the real output voltage is
outside its intended range. If the user wants to implement
their own OVP protection (to prevent damage to the output
capacitor, they should insert a zener from vout to the FB pin.
In this setup, it would be wise not to use the FBSW to FB
switch as otherwise the zener will have to be a high power
one capable of dissipating the entire LED load power. Then
the LED stack can then be connected directly to the sense
resistor and via a 10k resistor to FB. A zener can be placed
from Vout to the FB pin allowing an over voltage event to pull
up on FB with a low breakdown current (and thus low power
zener) as a result of the 10k resistor.
SEPIC Operation
For applications where the output voltage is not always
above the input voltage, a buck or boost regulation is
needed. A SEPIC (Single Ended Primary Inductance
V
IN
FIGURE 9. CONCEPTUAL 8 LEDS HIGH VOLTAGE DRIVER
= 2.7V TO 5.5V
C1
0.1µ
C2
VIN
EN
SDIN
ISL97632
1
FBSW
2.2µ
VOUT
L1
GND
FB
LX
2
M1
R1
FQT13N06L
6.3Ω
10BQ100
SK011C226KAR
D0
4.7µ
C3
April 10, 2007
FN9239.2
D1
D2
D3
D4
D5
D6
D7
D8

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