FS40SM-5 Mitsubishi Electric Semiconductor, FS40SM-5 Datasheet - Page 2

• Manufacturer Part Number: FS40SM-5
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
100
80
60
40
20
10
POWER DISSIPATION DERATING CURVE
0
8
6
4
2
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
50
T
Pulse Test
(TYPICAL)
C
20
= 25°C
P
100
D
(Tch = 25 C)
= 100W
30
I
I
V
V
I
I
I
I
V
V
R
I
Channel to case
D
GS
D
D
D
D
S
GS
DS
DS
DD
GEN
= 1.5A, V
= 1mA, V
= 1mA, V
= 1.5A, V
= 1.5A, V
= 1.5A, V
= 100 A, V
150
= 800V, V
= 25V, V
= 25V, V
= 200V, I
V
= R
C
GS
40
(°C)
DS
GS
= 20V
10V
5V
4V
GS
GS
GS
GS
DS
DS
(V)
GS
= 50
D
DS
GS
200
= 0V
= 10V
= 10V
= 10V
= 10V
= 0V
50
= 1.5A, V
= 0V, f = 1MHz
DS
= 0V
= 0V
= 0V
Test conditions
GS
= 10V,
10
10
10
10
2.0
1.6
1.2
0.8
0.4
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
3 5 7
0
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
10
T
Single Pulse
MITSUBISHI Nch POWER MOSFET
C
4
1
= 25°C
2
V
HIGH-SPEED SWITCHING USE
GS
3 5 7
(TYPICAL)
= 20V
8
10V
Min.
800
5V
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
10
30
2
2
12
2
3 5 7
Limits
2.53
3.80
Typ.
770
3.5
1.0
77
13
15
15
90
25
FS3SM-16A
—
—
—
—
—
T
Pulse Test
3
C
16
= 25°C
10
DS
DS
4.5V
100ms
1ms
10ms
100ms
DC
4V
3
(V)
(V)
2
Max.
3.30
4.95
1.25
1.5
20
—
—
—
—
—
—
—
—
—
—
3
10
1
4
Feb.1999
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A