FS40SM-5 Mitsubishi Electric Semiconductor, FS40SM-5 Datasheet - Page 3

• Manufacturer Part Number: FS40SM-5
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
40
32
24
16
10
8
0
8
6
4
2
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
0
2
DRAIN-SOURCE VOLTAGE V
Tch = 25°C
f = 1MH
V
GATE-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
3 5 7
GS
TRANSFER CHARACTERISTICS
= 0V
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
ON-STATE VOLTAGE VS.
4
4
Z
10
CAPACITANCE VS.
0
2
(TYPICAL)
(TYPICAL)
(TYPICAL)
3 5 7
8
8
10
12
12
1
2
3 5 7
T
Pulse Test
T
V
Pulse Test
C
C
DS
16
16
I
D
= 25°C
= 25°C
GS
GS
DS
= 50V
Coss
Crss
= 6A
Ciss
10
3A
1A
(V)
(V)
(V)
2
20
20
2
10
10
10
10
10
10
10
10
–1
10
10
10
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
3
2
1
0
FORWARD TRANSFER ADMITTANCE
–1
–1
–1
SWITCHING CHARACTERISTICS
2
ON-STATE RESISTANCE VS.
2 3
2 3 4 5 7
3 5 7
MITSUBISHI Nch POWER MOSFET
DRAIN CURRENT I
DRAIN CURRENT I
DRAIN CURRENT I
VS.DRAIN CURRENT
DRAIN CURRENT
HIGH-SPEED SWITCHING USE
10
5 7
T
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
C
2
= 25°C
10
10
3 5 7
V
0
0
Tch = 25°C
V
V
R
GS
DD
GS
GEN
125°C
= 10V
10
2 3
2 3 4 5 7
= 200V
= 10V
20V
= R
FS3SM-16A
1
75°C
D
D
D
V
Pulse Test
T
Pulse Test
2
(A)
(A)
(A)
t
t
t
t
DS
GS
C
d(off)
f
d(on)
r
= 25°C
3 5 7
= 10V
= 50
5 7
10
10
10
1
1
2
Feb.1999