2SC5103 Rohm, 2SC5103 Datasheet

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2SC5103

Manufacturer Part Number

2SC5103

Description

High speed switching transistor (60V/ 5A)

Manufacturer

Rohm

Datasheet

1.2SC5103.pdf (2 pages)

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Manufacturer

Quantity

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Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2SC5103

Manufacturer:

ROHM

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2SC5103 TL Q

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FUJI

Quantity:

200

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

2SC5103TL-Q

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

2SC5103TLQ

Manufacturer:

ROHM/罗姆

Quantity:

20 000

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Transistors

High speed switching transistor (60V, 5A)

2SC5103

! ! ! ! Features

1) Low V

2) High speed switching (tf : Typ. 0.1 µs at I

3) Wide SOA. (safe operating area)

4) Complements the 2SA1952.

! ! ! ! Absolute maximum ratings (Ta=25°C)

! ! ! ! Packaging specifications and h

! ! ! ! Electrical characteristics (Ta=25°C)

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Turn-on time

Storage time

Fall time

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Single pulse Pw=100ms

Basic ordering unit (pieces)

Measured using pulse current.

Package

Parameter

CE(sat)

Code

Type

h

Parameter

FE

(Typ. 0.15V at I

2SC5103

CPT3

2500

PQ

TL

Symbol

V

V

V

Tstg

P

Symbol

CBO

CEO

I

Tj

EBO

BV

BV

BV

V

V

C

C

Cob

C

I

I

tstg

CE(sat)

BE(sat)

h

ton

CBO

EBO

f

tf

FE

CBO

CEO

EBO

T

/ I

B

= 3 / 0.15A)

FE

−55~+150

Min.

100

Limits

60

82

5

−

−

−

−

−

−

−

−

−

−

−

100

150

60

10

10

5

5

1

C

Typ.

0.15

120

0.1

80

= 3A)

−

−

−

−

−

−

−

−

−

−

−

W(Tc=25°C)

A(Pulse)

Max.

270

A(DC)

0.3

0.5

1.2

1.5

0.3

1.5

0.3

10

10

Unit

−

−

−

−

−

°C

°C

W

V

V

V

MHz

Unit

µA

µA

pF

µs

µs

µs

∗

V

V

V

V

V

V

V

−

I

I

I

V

V

I

I

I

I

V

V

V

I

I

V

C

C

E

C

C

C

C

C

B1

CB

EB

/I

/I

/I

/I

CE

CB

CE

CC

= 50µA

= 1mA

= 50µA

= 3A , R

! ! ! ! External dimensions (Units : mm)

B

B

B

B

= −I

/I

= 100V

= 5V

= 10V , I

= 10V , I

= 3A/0.15A

= 4A/0.2A

= 3A/0.15A

= 4A/0.2A

C

30V

= 2V/1A

B2

ROHM : CPT3

EIAJ : SC-63

= 0.15A

L

= 10Ω

E

E

= 0.5A , f = 30MHz

= 0A , f = 1MHz

Conditions

0.8Min.

2.5

1.5

0.9

9.5

5.5

∗

∗

∗

∗

∗

1.5

C0.5

(1) Base(Gate)

(2) Collector(Drain)

(3) Emitter(Source)

2SC5103

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