MB82D01171B Fujitsu Microelectronics, Inc., MB82D01171B Datasheet - Page 10

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MB82D01171B

Manufacturer Part Number
MB82D01171B
Description
16 Mbit 1 M Word ? ? ? ? 16 Bit Mobile Phone Application Specific Memory
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
10
MB82D01171B
(3) Power Down Parameters
(4) Other Timing Parameters
*1: It may write some data into any address location if t
*2: Must satisfy t
*3: Requires Power Down mode entry and exit after t
*4: The Input Transition Time (t
(5) AC Test Conditions
CE2 Low Setup Time for Power Down Entry
CE2 Low Hold Time after Power Down Entry
CE1 High Hold Time following CE2 High
after Power Down Exit
CE1 High Setup Time following CE2 High
after Power Down Exit
CE1 High to OE Invalid Time for Standby Entry
CE1 High to WE Invalid Time for Standby Entry
CE2 Low Hold Time after Power-up
CE2 High Hold Time after Power-up
CE1 High Hold Time following CE2 High after
Power-up
CE1 and CE2 High Hold Time during Power-up
Input Transition Time
Input High Level
Input Low level
Input Timing Measurement Level
Input Transition Time
each AC specification must be relaxed accordingly.
Parameter
CHH
Parameter
Parameter
(Min) after t
T
) at AC testing is 5 ns as shown in below. If actual t
C2LH
-60L/-60LL/-70L/-70LL
(Min) .
Symbol
V
V
V
t
REF
T
IH
IL
Symbol
Symbol
Between V
t
t
t
t
C2LP
t
CHH
CHS
t
t
CSP
t
t
CHWX
t
CHOX
CHHP
C2LH
C2HL
CHH
t
C2HL
T
CHWX
Conditions
.
(Min) is not satisfied.
IL
Min
350
10
80
10
Min
350
400
-60L/-60LL
10
10
50
50
and V
-60L/-60LL
1
IH
Max
Max
25
Measured Value
V
Min
350
10
90
10
DD
-70L/-70LL
Min
350
400
10
10
50
50
0.4
1.3
-70L/-70LL
1
T
5
is longer than 5 ns,
0.4
Max
Max
25
Unit
ns
V
V
V
Unit
ns
ns
ns
Unit
ns
ns
ns
s
s
s
s
s
Note
Note
Note
*1
*2
*3
*2
*4

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