MB82D01171B Fujitsu Microelectronics, Inc., MB82D01171B Datasheet - Page 22

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MB82D01171B

Manufacturer Part Number
MB82D01171B
Description
16 Mbit 1 M Word ? ? ? ? 16 Bit Mobile Phone Application Specific Memory
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
22
MB82D01171B
12. Standby Entry Timing after Read or Write
13. POWER DOWN Entry and Exit Timing
14. POWER-UP Timing 1
Note : The t
Note : Both t
Note : This Power Down mode can be also used for Power-up #2 below.
CE1
CE1
CE2
V
WE
OE
CE1
CE2
DQ
it takes t
DD
C2LH
CHOX
RC
specifies after V
and t
(Min) period from either last address transition of A
0 V
Active Read
CHWX
Power Down Entry
define the earliest entry timing for Standby mode. If either of timing is not satisfied,
t
CSP
-60L/-60LL/-70L/-70LL
DD
V
t
CHOX
DD
reaches specified minimum level.
Min
t
C2LH
Standby
Power Down Mode
High-Z
t
C2LP
t
CHS
t
CHS
Active Write
2
, A
1
, and A
t
CHH
0
t
, or CE1 Low to High transition.
CHWX
Power Down Exit
t
CHH
Standby

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