GT40T301 Toshiba Semiconductor, GT40T301 Datasheet - Page 2

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GT40T301

Manufacturer Part Number
GT40T301
Description
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Manufacturer
Toshiba Semiconductor
Datasheet

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Part Number:
GT40T301
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Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Emitter-collector forward voltage
Reverse recovery time
Thermal resistance
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
(Ta
V
V
Symbol
GE (OFF)
R
CE (sat)
V
I
I
C
th (j-c)
25°C)
GES
CES
t
t
ECF
t
on
off
t
t
ies
rr
r
f
V
V
I
I
V
I
I
IGBT
Diode
C
C
ECF
ECF
GE
CE
CE
15 V
0
40 mA, V
40 A, V
15 V
1500 V, V
10 V, V
30 A, V
30 A, V
2
25 V, V
GE
Test Condition
CE
GE
GE
GE
CE
51
GE
15 V
5 V
0, f
0
0, di/dt
0
0
1 MHz
600 V
20 A/ s
Min
4.0
2900
Typ.
0.40
0.45
0.23
3.7
0.6
1.9
0.7
GT40T301
2002-01-18
0.625
0.40
1.25
Max
1.0
7.0
5.0
2.5
3.0
500
°C/W
Unit
mA
nA
pF
V
V
V
s
s

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