SGL-0363Z Sirenza Microdevices, SGL-0363Z Datasheet

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SGL-0363Z

Manufacturer Part Number
SGL-0363Z
Description
Low Noise Amplifier Silicon Germanium
Manufacturer
Sirenza Microdevices
Datasheet

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Quantity
Price
Part Number:
SGL-0363Z
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
SGL-0363Z-EVB1
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
SGL-0363ZSB
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RFMD
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5 000
Part Number:
SGL-0363ZSQ
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M/A-COM
Quantity:
5 000
Product Description
Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is
designed for 2.7 to 3.3V battery operation. The matching networks are
implemented externally which allows for optimum narrow-band performance
with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC
uses the latest Silicon Germanium HBT process.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post
annealing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. The package body is manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
RF In
Test Conditions:
303 S. Technology Ct.
Broomfield, CO 80021
Symbol
R
ORL
P
S12
IIP
IRL
TH
Narrow-band
Matching
Network
S
NF
I
1dB
D
21
, j-l
3
Gnd
Small Signal Gain
Output Power at 1dB Compression
Input Third Order Intercept Point
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Device Operating Current
Thermal Resistance (junction - lead)
Simplified Device Schematic
V
S
T
= 3.3V
L
= 25°C
Active Bias
Network
Parameters
Vpc
Z
Gnd
I
S
D
= Z
= 5.7mA Typ.
L
= 50 Ohms
Phone: (800) SMI-MMIC
Narrow-band
Matching
Network
RF Out
1
Units
°C/W
dBm
dBm
dBm
dBm
dBm
dBm
mA
dB
IIP
Different Application Circuit per Band
SGL-0363Z
5-2000 MHz Low Noise Amplifier
Silicon Germanium
Product Features
Applications
3
Tone Spacing = 1MHz, Pout per tone = -15 dBm
Lead Free, RoHS Compliant & Green Package
Low Power Consumption, 5.7mA @ 3.3V
External Input Noise Match
High Gain and Low Noise,
20dB and 1.1dB respectively @ 900MHz
Operates from 2.7 to 3.3V
Power Shutdown Capability using V
500V ESD, Class 1B
Small Package: SOT-363
High input overdrive capability, +18dBm
Low Power LNA for ISM,
Cellular and Mobile Communications
Frequency
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
Min.
4.8
17
Pb
&
RoHS Compliant
Preliminary
Green
Typ.
-3.8
-2.4
-7.1
173
1.1
2.2
2.5
1.0
1.1
1.1
5.7
21
20
20
14
12
15
20
19
12
24
25
27
Package
PC
http://www.sirenza.com
EDS-104341 Rev D
Max.
6.6
23

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SGL-0363Z Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC uses the latest Silicon Germanium HBT process. The matte tin finish on Sirenza’ ...

Page 2

... Note: S-parameters are de-embedded to the device leads with application circuit. De-embedded S-parameters can be downloaded from our website (www.sirenza.com) S11 Vs. Frequency 4 GHz 3 GHz 2 GHz 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 8 Absolute Limit 7 20mA 5 +18 dBm 5 +150°C 4 -40° ...

Page 3

... Frequency (MHz) IM3 vs. Tone Power @200MHz -30 -40 -50 -60 -70 -80 -19 -17 -15 -13 Pout per tone (dBm) 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier = 3.3V 5.7mA 170 210 220 230 S11 17 S12 ...

Page 4

... Frequency (MHz) IM3 vs. Tone Power @450MHz -30 -40 -50 -60 -70 -80 -19 -17 -15 -13 Pout per tone (dBm) 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier = 3.3V 5.7mA 420 460 470 480 20 19 S11 18 S12 ...

Page 5

... Frequency (MHz) IM3 vs. Tone Power @900MHz -30 -40 -50 -60 -70 -80 -19 -17 -15 -13 Pout per tone (dBm) 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier = 3.3V 5.7mA 910 920 930 870 ...

Page 6

... Application Schematic for 200 MHz Ζ=50Ω, 7.5° Evaluation Board Layout for 200 MHz 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω ...

Page 7

... Broomfield, CO 80021 Electrical lengths are determined from 56Ω Ζ=50Ω, 1.8° Ζ=50Ω, 2.5° Ζ=50Ω, 8.5° Phone: (800) SMI-MMIC 7 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 6.8Ω Ζ=50Ω, 2.5° Ζ=50Ω, 3.3° 2.2ΚΩ Bill of Materials C1 1.0uF Tantalum capacitor ...

Page 8

... Application Schematic for 900 MHz Ζ=50Ω, 4.5° Evaluation Board Layout for 900 MHz 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω ...

Page 9

... PC PC Part Identification L03Z 303 S. Technology Ct. Broomfield, CO 80021 SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Description 900MHz Layout Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. Phone: (800) SMI-MMIC 9 Preliminary Part Number Ordering Information ...

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