SGL-0363Z Sirenza Microdevices, SGL-0363Z Datasheet - Page 2

• Manufacturer Part Number: SGL-0363Z
• Description: Low Noise Amplifier Silicon Germanium
• Manufacturer: Sirenza Microdevices

Typical Performance - De-embedded S-parameters
Note: S-parameters are de-embedded to the device leads with
application circuit. De-embedded S-parameters can be downloaded from our website (www.sirenza.com)
303 S. Technology Ct.
Broomfield, CO 80021
*Note: Load condition 1, Z
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
Frequency
Max. RF Input Power* (See Note)
S11 Vs.
Operating Temp. Range (T
This product qualification report can be downloaded at www.sirenza.com
Max. Junction Temp. (T
Max Device Voltage (V
Max Device Current (I
Load condition 2, Z
Max. Storage Temp.
ESD Rating - Human Body Model (HBM)
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Parameter
Moisture Sensitivity Level
I
Absolute Maximum Ratings
D
Reliability & Qualification Information
V
D
Parameter
< (T
J
L
L
- T
= 50 Ohms
= 10:1 VSWR
D
D
J
)
L
)
)
) / R
L
)
4 GHz
3 GHz
TH
2 GHz
, j-l
.9 GHz
T
Absolute Limit
L
-40°C to +85°C
=T
+18 dBm
LEAD
+150°C
+150°C
20mA
5.5 V
Phone: (800) SMI-MMIC
ZS=ZL=50Ω. The device was mounted on eval. board 125390-B and grounded like 900MHz
.45 GHz
Class 1B
Rating
MSL 1
.2 GHz
2
Frequency
S22 Vs.
30
25
20
15
10
5
0
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
8
7
6
5
4
3
2
1
0
0
0
Gain
0.5
1
Insertion Gain & Isolation
Max Gain
1
Frequency (GHz)
DCIV over Temperature
25C
-40C
85C
1.5
Vd (V)
2
2
4 GHz
2.5
3 GHz
3
Preliminary
Isolation
http://www.sirenza.com
3
2 GHz
3.5
.9 GHz
EDS-104341 Rev D
4
.45 GHz
-5
-10
-15
-20
-25
-30
-35
.2 GHz
4