1SV322 Toshiba Semiconductor, 1SV322 Datasheet

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1SV322

Manufacturer Part Number
1SV322
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
Manufacturer
Toshiba Semiconductor
Datasheet

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TCXO/VCO
·
·
·
Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C
Low series resistance: r
Useful for small size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Characteristics
Characteristics
(Ta = = = = 25°C)
s
= 0.4 Ω (typ.)
1 V
TOSHIBA Diode Silicon Epitaxial Planar Type
/C
4 V
(Ta = = = = 25°C)
= 4.3 (typ.)
C
Symbol
Symbol
1 V
C
C
T
V
V
I
T
r
stg
1 V
4 V
R
/C
s
R
R
j
4 V
1SV322
I
V
V
V
V
R
R
R
R
R
= 1 mA
-55~125
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 4 V, f = 100 MHz
Rating
125
10
1
Test Condition
¾
Unit
°C
°C
V
Weight: 0.004 g (typ.)
JEDEC
JEITA
TOSHIBA
26.5
Min
6.0
4.0
10
¾
¾
Typ.
4.3
0.4
¾
¾
¾
¾
1-1E1A
2003-03-24
29.5
Max
7.1
0.8
¾
¾
3
1SV322
Unit: mm
Unit
nA
pF
pF
¾
W
V

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1SV322 Summary of contents

Page 1

... ¾ 100 MHz Unit V °C °C JEDEC JEITA TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. ¾ 10 ¾ ¾ ¾ 26.5 ¾ 6.0 4.0 4.3 ¾ 0.4 2003-03-24 1SV322 Unit: mm ― ― Max Unit ¾ 29.5 pF 7.1 pF ¾ ¾ W 0.8 ...

Page 2

... 2 1SV322 2003-03-24 ...

Page 3

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 1SV322 000707EAA 2003-03-24 ...

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