GP201MHS18 Dynex Semiconductor, GP201MHS18 Datasheet - Page 2

• Manufacturer Part Number: GP201MHS18
• Description: Low VCE(SAT) Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP201MHS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
THERMAL AND MECHANICAL RATINGS
case
2/10
Symbol
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
R
R
R
= 25˚C unless stated otherwise
V
V
I
P
V
T
C(PK)
th(c-h)
th(j-c)
th(j-c)
I
T
CES
GES
max
-
isol
C
stg
j
Collector-emitter voltage
Gate-emitter voltage
Collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
V
DC, T
1ms, T
T
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
case
GE
= 0V
= 25˚C, T
case
case
= 80˚C for T
= 120˚C
j
= 150˚C
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting - M6
j
= 125˚C
Test Conditions
Test Conditions
-
-
www.dynexsemi.com
Min.
–40
-
-
-
-
-
-
Max.
1800
1500
4000
Max.
200
400
160
150
125
125
84
15
20
5
˚C/kW
˚C/kW
˚C/kW
Units
Units
Nm
˚C
˚C
˚C
W
V
V
A
A
V