GP201MHS18 Dynex Semiconductor, GP201MHS18 Datasheet - Page 5

• Manufacturer Part Number: GP201MHS18
• Description: Low VCE(SAT) Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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180
160
140
120
100
80
60
40
20
250
200
400
350
300
150
100
0
Fig. 5 Typical turn-on energy vs collector current
50
0
0
0
T
V
V
Common emitter
T
case
GE
CE
case
20
Fig. 3 Typical output characteristics
= 900V
= 15V
= 125˚C
= 25˚C
40
1.0
Collector-emitter voltage, V
60
Collector current, I
80
2.0
100 120
3.0
C
- (A)
140 160 180
V
ce
ge
- (V)
= 20/15/12/10V
A: R
B: R
C: R
4.0
g
g
g
= 10
= 6.2
= 4.7
C
A
B
200
5.0
160
140
120
100
250
200
400
350
300
150
80
60
40
20
100
0
Fig. 6 Typical turn-off energy vs collector current
50
0
0
0
T
V
V
Common emitter
T
case
GE
CE
case
20
Fig. 4 Typical output characteristics
= 15V
= 900V
= 125˚C
= 125˚C
1.0
40
Collector-emitter voltage, V
60
Collector current, I
2.0
80
100
3.0
120
C
- (A)
GP201MHS18
4.0
140
V
ce
ge
- (V)
= 20/15/12/10V
A: R
B: R
C: R
160
5.0
g
g
g
= 10
= 6.2
= 4.7
180
A
B
C
200
5/10
6.0