GP250MHB06S Dynex Semiconductor, GP250MHB06S Datasheet - Page 4

• Manufacturer Part Number: GP250MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP250MHB06S
INDUCTIVE SWITCHING CHARACTERISTICS
T
j
T
4/10
= 25˚C unless stated otherwise
Symbol
j
= 125˚C unless stated otherwise.
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
d(off)
d(on)
Q
t
t
t
t
t
t
OFF
OFF
rr
ON
rr
ON
f
r
f
r
rr
rr
Diode reverse recovery charge
Fall time
Turn-off energy loss
Rise time
Turn-on energy loss
Fall time
Turn-off energy loss
Rise time
Turn-on energy loss
Turn-off delay time
Turn-on delay time
Diode reverse recovery time
Diode reverse recovery charge
Turn-off delay time
Turn-on delay time
Diode reverse recovery time
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
V
V
R
R
= 50%V
= 50%V
R
R
G(ON)
G(ON)
V
V
CE
CE
Conditions
V
V
L ~ 100nH
L ~ 200nH
I
CES
I
CES
C
GE
I
C
GE
I
= R
= R
= 50% V
= 50% V
F
F
= 250A
= 250A
= 250A
= 250A
, dI
, dI
= 15V
= 15V
G(OFF)
G(OFF)
F
F
/dt = 1500A/ s
/dt = 1500A/ s
CES
= 5
CES
= 5
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
1050
Typ.
810
310
330
130
450
380
160
165
230
20
12
30
18
23
15
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
C
C