GP250MHB06S Dynex Semiconductor, GP250MHB06S Datasheet - Page 7

• Manufacturer Part Number: GP250MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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500
300
200
100
600
400
1400
1200
1000
800
600
400
200
0
0
0
0
T
V
R
Fig.11 Typical switching characteristics
j
ge
g
Fig.13 Reverse bias safe operating area
t
t
= 125˚C
d(off)
d(on)
= 5
t
t
= 15V
r
f
50
Collector-emitter voltage, V
200
Collector current, I
100
400
150
C
200
- (A)
ce
600
- (V)
T
V
V
R
j
GE
CE
g
= 125˚C
= 5
250
= 300V
= 15V
800
300
Fig.14 Forward bias safe operating area (DC and single pulse)
10000
1000
150
250
225
200
175
125
100
100
75
50
25
10
0
1
0
1
Fig.12 Diode typical forward characteristics
I
C
max. (single pulse)
0.25
Collector-emitter voltage, V
Foward voltage, V
10
0.50
T
j
= 125˚C
0.75
t
GP250MHB06S
F
p
100
- (V)
= 1ms
ce
- (V)
1.00
100 s
T
j
= 25˚C
50 s
1.25
1000
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