BYW29G-200 STMicroelectronics, BYW29G-200 Datasheet - Page 4

• Manufacturer Part Number: BYW29G-200
• Description: HIGH EFFICIENCY FAST RECOVERY DIODES
• Manufacturer: STMicroelectronics

Fig.7 : Junction capacitance versus reverse volt-
age applied (Typical values).
Fig.9 : Peak reverse current versus dIF/dt.
BYW29G-200
4/5
C(pF)
I RM(A)
90% CONFIDENCE
Tj-100 C
dIF/dt(A/us)
O
VR(V)
F=1Mhz Tj=25 C
IF=IF(av)
o
Fig.8 : Recovery charges versus dI
Fig.10 : Dynamic parameters versus junction tem-
perature.
QRR(nC)
90%CONFIDENCE Tj-10 0 C
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
Tj( C)
IRM
dIF/dt(A/us)
o
O
QRR
o
F
/dt.
IF=IF(av)