GP350MHB06S Dynex Semiconductor, GP350MHB06S Datasheet - Page 2

• Manufacturer Part Number: GP350MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP350MHB06S
ABSOLUTE MAXIMUM RATINGS - PER ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
THERMAL AND MECHANICAL RATINGS
case
2/10
Symbol
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
R
R
R
V
I
= 25˚C unless stated otherwise
V
P
T
C(PK)
V
th(c-h)
th(j-c)
T
th(j-c)
GES
I
CES
max
-
stg
C
isol
j
Junction temperature
Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease)
Storage temperature range
Screw torque
Thermal resistance - transistor
Thermal resistance - diode
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum power dissipation
Isolation voltage
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
V
DC, T
DC, T
1ms, T
1ms, T
(Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
GE
= 0V
case
case
case
case
= 25˚C
= 75˚C
= 25˚C
= 75˚C
Transistor
Mounting - M6
DC junction to case per arm
Diode
Electrical connections - M6
DC junction to case
Test Conditions
Conditions
-
-
-
www.dynexsemi.com
Min.
- 40
-
-
-
-
-
-
-
Max.
1000
1750
2500
500
350
700
600
20
Max.
150
125
160
125
70
15
5
5
Units
o
o
o
Units
C/kW
C/kW
W
C/kW
V
A
A
A
A
V
Nm
V
Nm
o
o
o
C
C
C