GP350MHB06S Dynex Semiconductor, GP350MHB06S Datasheet - Page 3

• Manufacturer Part Number: GP350MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
j
= 25˚C unless stated otherwise.
Symbol
V
V
CE(SAT)
I
I
C
GE(TH)
CES
GES
I
V
I
FM
ies
F
F
Collector cut-off current
Gate leakage current
Diode maximum forward current
Input capacitance
Diode forward current
Diode forward voltage
Gate threshold voltage
Collector-emitter saturation voltage
Parameter
V
V
V
V
I
I
DC
t
I
V
V
C
F
p
F
GE
GE
GE
CE
GE
GE
= 1ms
= 350A, T
= 10mA, V
= 350A,
= 25V, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
CE
CE
Conditions
C
j
C
GE
GE
= 125˚C
= 350A, T
= V
= 350A
= V
CE
= 0V, f = 1MHz
= V
= 0V
CES
CES
CE
, T
j
j
= 125˚C
= 125˚C
Min.
4
-
-
-
-
-
-
-
-
-
-
GP350MHB06S
22500
Typ.
1.51
2.0
2.2
1.5
-
-
-
-
-
-
Max.
2.31
215
700
7.5
2.6
2.8
2.3
2
-
-
1
Units
mA
mA
pF
V
V
V
V
A
V
A
3/10
A