1SS393 TOSHIBA Semiconductor CORPORATION, 1SS393 Datasheet

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1SS393

Manufacturer Part Number
1SS393
Description
Toshiba Diode Silicon Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Speed Switching Application
l Low forward voltage
l Low reverse current
l Small package
Maximum Ratings
Electrical Characteristics
* : Unit rating. Total rating = unit rating ´ 1.5
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Forward voltage
Reverse current
Total capacitance
Characteristic
Characteristic
(Ta = 25°C)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
: V
: I
: SC-70
R
F (3)
= 5µA (max)
(Ta = 25°C)
= 0.54V (typ.)
Symbol
Symbol
V
V
V
V
I
T
T
F (1)
F (2)
F (3)
C
I
FSM
I
V
FM
I
T
R
RM
P
opr
stg
O
T
R
j
1SS393
Circuit
Test
−55~125
−40~100
Rating
300 *
100 *
100
125
1 *
45
40
1
I
I
I
V
V
F
F
F
R
R
= 1mA
= 10mA
= 100mA
= 40V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
°C
V
V
A
z
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
Min
Typ.
0.28
0.36
0.54
18
1-2P1B
SC-70
2001-06-07
0.60
Max
25
5
1SS393
Unit: mm
Unit
µA
pF
V

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1SS393 Summary of contents

Page 1

... F I ― 40V ― 1MH Unit °C °C JEDEC ― EIAJ SC-70 °C TOSHIBA 1-2P1B Weight: 0.006g Min Typ. ― 0.28 ― 0.36 ― 0.54 0.60 ― ― ― 2001-06-07 1SS393 Unit: mm Max Unit ― ― µ ...

Page 2

... Equivalent Circuit (Top View) Marking 2 1SS393 2001-06-07 ...

Page 3

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 1SS393 000707EAA 2001-06-07 ...

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