MMBTH10L-X-AE3-R Unisonic Technologies, MMBTH10L-X-AE3-R Datasheet - Page 3

• Manufacturer Part Number: MMBTH10L-X-AE3-R
• Description: Rf Transistor Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBTH10
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
100
0.7
0.5
0.4
0.9
0.8
0.6
0.3
80
60
40
20
0
0.1
1
0.1
10
0.1
1
25
β=10
V
0.2 0.5
Typical Pulsed Current Gain Vs
Voltage Vs Collector Current
V
CE
Ambient Temperature, T
Collector Current , I
Collector Current , I
CB
Base-Emitter Saturation
125℃
=5V
-40℃
Collector-Cutoff Current Vs
25℃
=30V
-40℃
50
Ambient Temperature
Collector Current
1
1
75
25℃
2
100
5
125℃
C
C
10
(mA)
(mA)
10
125
A
20
(℃)
20
150
50
0.15
0.05
0.2
0.8
0.6
0.4
0.2
0.1
300
250
200
150
100
350
1
50
0.01
0.1
0
0
V
Voltage Vs Collector Current
Base - Emitter ON Voltage Vs
Collector-Emitter Saturation
CE
β=10
-40℃
Power Dissipation Vs Ambient
NPN SILICON TRANSISTOR
Collector Current , I
=5V
Collector Current , I
25
0.1
Collector Current
Temperature (℃)
-40℃
50
Temperautre
1
25℃
25℃
1
75
125℃
100
C
125℃
10
C
(mA)
(mA)
10
125
100
QW-R206-003,E
20
150
3 of 5