MMBTH10L-X-AE3-R Unisonic Technologies, MMBTH10L-X-AE3-R Datasheet - Page 4

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MMBTH10L-X-AE3-R

Manufacturer Part Number
MMBTH10L-X-AE3-R
Description
Rf Transistor Npn Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
MMBTH10
TYPICAL CHARACTERISTICS(Cont.)
-120
120
-120
-40
-80
UNISONIC TECHNOLOGIES CO., LTD
120
80
40
www.unisonic.com.tw
-40
-80
24
20
16
12
40
80
0
8
4
0
0
0
0
0
V
V
Ic=5mA
Ic=2mA
CE
CE
=10V
=10V
Forward Transfer Admittance
b
fb
Input Admittance
Frequency, f (MHz)
g
Frequency, f (MHz)
200
200
fb
200
b
Frequency, f (MHz)
ib
Input Admittance
500
500
g
500
ib
V
Ic=5mA
CE
g
b
ie
ie
=10V
1000
1000
1000
12
10
8
6
4
2
0
100
6
5
4
3
2
1
0
8
6
4
2
0
V
Ic=5mA
0
0
CE
V
V
Ic=5mA
Ic=2mA
=10V
CE
CE
NPN SILICON TRANSISTOR
=10V
=10V
Reverse Transfer Admittan
Frequency, f (MHz)
Output Admittance
200
Output Admittance
Frequency, f (MHz)
200
Frequency, f (MHz)
200
b
ob
500
500
500
-b
rb
-g
g
rb
ob
b
g
oe
oe
1000
1000
1000
QW-R206-003,E
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