MMBT2222AL-AN3-R Unisonic Technologies, MMBT2222AL-AN3-R Datasheet - Page 2

• Manufacturer Part Number: MMBT2222AL-AN3-R
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBT2222A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
Thermal Resistance, Junction to Ambient
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Frequency Input Impedance
Transition Frequency
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
cycle operations.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
SYMBOL
V
V
Re(hje)
BV
BV
BV
Cobo
rb'Cc
CE(SAT)
Cibo
BE(SAT)
I
I
I
h
NF
CBO
CEO
EBO
I
f
BL
FE
CBO
CEO
EBO
T
(Ta=25°C, unless otherwise specified.)
SOT-523
SOT-523
(Ta=25°C, unless otherwise specified.)
SOT-23
SOT-23
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
f=1.0kHz
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CB
EB
=10µA, I
=10µA, I
=10mA, I
=20mA, V
=20mA, V
=100µA, V
=0.1mA, V
=1.0mA, V
=10mA, V
=10mA, V
=150mA, V
=150mA, V
=500mA, V
=150mA, I
=500mA, I
=150mA, I
=500mA, I
=20mA, V
=3.0V, I
=0.5V, I
=60V, I
=60V, I
=60V, V
=60V, V
=10V, I
TEST CONDITIONS
C
E
B
E
E
E
SYMBOL
SYMBOL
=0
C
C
EB(OFF)
EB(OFF)
CB
CB
=0
=0
=0
=0, Ta=150°C
=0, f=100kHz
CE
CE
CE
CE
=0
=0, f=100kHz
B
B
B
B
CE
CE
V
V
V
T
CE
CE
CE
=15mA
=50mA
=15mA
=50mA
=20V, f=300MHz
=20V, f=31.8MHz
θ
P
=10V
=10V, Ta= -55°C
=20V, f=100MHz
=10V, Rs=1.0kΩ
T
CBO
CEO
Ic
EBO
STG
=10V
=10V
JA
=10V*
=1.0V*
=10V*
C
J
=3.0V
=3.0V
NPN SILICON TRANSISTOR
-55 ~ +150
RATINGS
RATINGS
+150
MIN
100
300
350
150
833
0.6
0.6
75
40
35
50
75
35
50
40
75
40
15
6
6
TYP
MAX
0.01
300
150
0.3
1.0
1.2
2.0
8.0
4.0
10
10
20
10
60
25
QW-R206-019,D
UNIT
UNIT
°C/W
°C/W
mW
mW
UNIT
℃
℃
2 of 6
MHz
V
V
V
A
µA
µA
nA
nA
nA
pF
pF
pS
dB
Ω
V
V
V
V
V
V
V