MMBT5401L-X-AE3-R Unisonic Technologies, MMBT5401L-X-AE3-R Datasheet - Page 2

• Manufacturer Part Number: MMBT5401L-X-AE3-R
• Description: Pnp Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBT5401
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Note: Pulse test: PW<300μs, Duty Cycle<2%
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
ABSOLUATE MAXIUM RATINGS
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
UNISONIC TECHNOLOGIES CO., LTD
RANK
PARAMETER
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
V
BV
BV
BV
80-170
CE(SAT)
BE(SAT)
I
I
h
C
NF
CBO
EBO
f
FE
T
A
CBO
CEO
EBO
ob
(Ta = 25℃)
I
I
I
V
V
V
V
V
I
I
I
I
V
V
I
R
(Ta= 25℃, unless otherwise specified)
C
C
E
C
C
C
C
C
CB
BE
CE
CE
CE
CE
CB
=-100μA, I
=-1mA, I
=-10μA, I
=-10mA, I
=-50mA, I
=-10mA, I
=-50mA, I
=-0.25mA, V
S
=1kΩ, f=10Hz ~ 15.7kHz
=-3V, Ic=0
=-120V, I
=-5V, Ic=-1mA
=-5V, Ic=-10mA
=-5V, Ic=-50mA
=-10V, Ic=-10mA, f=100MHz
=-10V, I
TEST CONDITIONS
B
C
=0
B
B
B
B
E
=0
E
=-1mA
=-5mA
=-1mA
=-5mA
=0, f=1MHz
E
=0
SYMBOL
=0
CE
V
V
V
T
=-5V
P
T
CBO
CEO
I
EBO
STG
C
D
J
150-240
B
PNP SILICON TRANSISTOR
-55 ~ +150
-160
-150
RATINGS
MIN
100
80
80
80
-6
+150
-160
-150
-600
350
-5
TYP
160
200-400
MAX
C
-0.2
-0.5
400
300
-50
-50
6.0
-1
-1
QW-R206-011.E
8
UNIT
UNIT
mW
MHz
2 of 4
mA
°C
°C
nA
nA
dB
pF
V
V
V
V
V
V
V
V