T436416A TM, T436416A Datasheet

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T436416A

Manufacturer Part Number
T436416A
Description
4M X 16 SDRAM
Manufacturer
TM
Datasheet

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T436416A-6S
T436416A-7S
T436416A-7.5S
T436416A-8S
T436416A-10S
T436416A-6SG
T436416A-7SG
T436416A-7.5SG
T436416A-8SG
T436416A-10SG
tm
SDRAM
FEATURES
ORDERING INFORMATION
TM Technology Inc. reserves the right
to change products or specifications without notice.
Operating temperature : 0 ~ +70 C
64ms refresh period (4K cycle)
MRS cycle with address key programs
Available package type in 54 pin TSOP(II)
- CAS Latency ( 2 & 3 )
PART NO.
3.3V power supply
Four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
CH
TE
FREQUENCY
166 MHz
143 MHz
133 MHz
125 MHz
100 MHz
166 MHz
143 MHz
133 MHz
125 MHz
100 MHz
MAX
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
54 pin TSOP(II)
PACKAGE
lead-free
lead-free
lead-free
lead-free
lead-free
P. 1
1M x 16bit x 4Banks Synchronous DRAM
GRNERAL DESCRIPTION
high data rate Dynamic RAM organized as
4 x 1,048,576 words by 16 bits , fabricated with
high performance CMOS technology .
with the use of system clock I/O transactions are
possible on every clockcycle . Range of operating
frequencies , programmable burst length and
programmable latencies allow the same device to
be useful for a variety of high bandwidth , high
performance memory system applications.
PIN ARRANGEMENT (Top View)
Synchronous design allows precise cycle control
The T436416A is 67,108,864 bits synchronous
A 1 0 / A P
L D Q M
V
V
V
V
C A S
R A S
D Q 1
D Q 2
D Q 3
D Q 4
D Q 5
D Q 6
D Q 7
D Q 0
B A 0
B A 1
V
V
V
D D Q
D D Q
W E
S S Q
S S Q
C S
A 0
A 1
A 2
A 3
D D
D D
D D
1
2
3
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
2 0
2 1
2 2
2 3
2 4
2 5
2 6
2 7
4M x 16 SDRAM
( 0 . 8 m m P I N P I T C H )
( 4 0 0 m i l x 8 7 5 m i l )
5 4 P I N T S O P ( I I )
Publication Date: MAY. 2003
T436416A
5 0
4 9
4 8
4 7
4 6
4 5
4 4
4 3
4 2
4 1
4 0
3 9
3 8
3 7
3 6
3 5
3 4
3 2
3 1
3 0
2 9
2 8
5 4
5 3
5 2
5 1
3 3
Revision: B
V s s
D Q 1 5
V
D Q 1 4
D Q 1 3
V
D Q 1 2
D Q 1 1
V
D Q 1 0
D Q 9
V
D Q 8
V s s
N . C / R F U
U D Q M
C L K
C K E
N . C
A 1 1
A 9
A 8
A 7
A 6
A 5
A 4
V s s
S S Q
D D Q
S S Q
D D Q

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T436416A Summary of contents

Page 1

... TM Technology Inc. reserves the right to change products or specifications without notice 16bit x 4Banks Synchronous DRAM GRNERAL DESCRIPTION The T436416A is 67,108,864 bits synchronous high data rate Dynamic RAM organized 1,048,576 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle ...

Page 2

... D ata Input R egister olum n D ecoder Latency & Burst Length Program m ing R egister Tim ing Register T436416A L(U)D QM Publication Date: MAY. 2003 Revision ...

Page 3

... Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core logic. Isolated power supply and ground for the output buffers to provide improved noise immunity. This pin is recommended to be left No Connection on the device T436416A WE , active. Publication Date: MAY. 2003 Revision: B ...

Page 4

... CLK C ADD C OUT Value -1.0 to 4.6 -1 +70 -55 to +125 Typ Max. Unit 3.3 3.6 V 3.0 V + Min Max 2.5 4.0 2.5 5.0 4.0 6.5 2.5 5.0 Publication Date: MAY. 2003 T436416A Unit Notes =-2mA OH I =2mA Unit Revision: B ...

Page 5

... P. 5 T436416A Test Condition Burst Length = (min) , (min), CKE V (max), =15ns ...

Page 6

... DC Output Load Circuit TM Technology Inc. reserves the right to change products or specifications without notice Value 3 1 1.4 See Fig.2 VOH(DC)=2.4,IOH=-2mA VOL(DC)=0.4,IOL=2mA P. 6 T436416A Unit Output ZO=50 ohm (Fig.2)AC Output Load Circuit Publication Date: MAY. 2003 Revision: B Vtt=1.4v 50 ohm 30pf ...

Page 7

... (min) RAS t (max) RAS (min (min) CDL t (min) RDL t (min) BDL t (min) CCD CAS latency=3 CAS latency T436416A Unit -7 100K CLK 2 CLK 1 ...

Page 8

... SAC - 2.5 2 2.5 2 2.5 2 1.5 1.75 1. SLZ - 5 SHZ - P.8 T436416A -7.5 -8 -10 Unit Note Max Min Max Min Max 2 Publication Date: MAY. 2003 ...

Page 9

... CAS Frequency Latency 100MHz(10.0ns) 2 83MHz(12.0ns) 2 75MHz(13.0ns) 2 66MHz(15.0ns) 2 60MHz(16.7ns Note : 1. 16.7ns is recommended for T436416A RDL 2. Clock count formula : clock TM Technology Inc. reserves the right to change products or specifications without notice RAS RP RRD 60ns 42ns 18ns ...

Page 10

... Use in future Vender Specific Mode Register Set Burst length Wrap type Latency mode P.10 T436416A v = Valid x = Don’t care Bit2-0 WT=0 WT=1 000 1 1 001 2 2 010 4 4 011 8 8 100 R R 101 R R 110 R ...

Page 11

... Cf.) Sequence of 4 & regardless of the order. TM Technology Inc. reserves the right to change products or specifications without notice. Sequential Addressing Sequence (decimal) 0,1 1,0 Sequential Addressing Sequence (decimal) 0,1,2,3 1,2,3,0 2,3,0,1 3,0,1,2 Sequential Addressing Sequence (decimal) 0,1,2,3,4,5,6,7 1,2,3,4,5,6,7,0 2,3,4,5,6,7,0,1 3,4,5,6,7,0,1,2 4,5,6,7,0,1,2,3 5,6,7,0,1,2,3,4 6,7,0,1,2,3,4,5 7,0,1,2,3,4,5,6 P.11 T436416A Interleave Addressing Sequence (Decimal) 0,1 1,0 Interleave Addressing Sequence (Decimal) 0,1,2,3 1,0,3,2 2,3,0,1 3,2,1,0 Interleave Addressing Sequence (Decimal) 0,1,2,3,4,5,6,7 1,0,3,2,5,4,7,6 2,3,0,1,6,7,4,5 3,2,1,0,7,6,5,4 4,5,6,7,0,1,2,3 5,4,7,6,1,0,3,2 6,7,4,5,2,3,0,1 7,6,5,4,3,2,1,0 Publication Date:MAY. 2003 Revision: B ...

Page 12

... (V=Valid , X=Don’t Care , H=Logic High , L=logic Low BA0~BA1 : Program keys.(@MRS after the end of burst. RP P.12 T436416A BA / 0,1 A11 Row Address ...

Page 13

... Bs Bs *Note3 *Note3 SRC SLZ Read W rite P.13 T436416A *Note2. *Note4 *Note2 *Note3 *Note4 Rb Qc Read Row Active Precharge Publication Date: MAY. 2003 18 19 :Don't care ...

Page 14

... X TMemory Technology Inc. reserves the right to change products or specifications without notice. Active & Read/Write Bank A Bnak B Bank C Bnak D Operation precharge 0 Bank A 0 Bank B 1 Bank C 1 Bank D X All Bamks P.14 T436416A /AP in read/wirte command. 10 Publication Date: MAY. 2003 Revision: B ...

Page 15

... P.15 T436416A ...

Page 16

... after the clock. SHZ t SAC Publication Date: MAY. 2003 T436416A Revision: B ...

Page 17

... RDL P.17 T436416A ...

Page 18

... Publication Date: MAY. 2003 T436416A Revision: B ...

Page 19

... Publication Date: MAY. 2003 T436416A Revision: B ...

Page 20

... Publication Date: MAY. 2003 T436416A Revision: B ...

Page 21

... Publication Date: MAY. 2003 T436416A ...

Page 22

... Publication Date: MAY. 2003 T436416A Revision: B ...

Page 23

... P.23 T436416A ...

Page 24

... RDL P. Publication Date: MAY. 2003 T436416A Revision: B ...

Page 25

... RAS Publication Date: MAY. 2003 T436416A ...

Page 26

... Row active command tiv Publication Date: MAY. 2003 T436416A Revision: B ...

Page 27

... P.27 T436416A ...

Page 28

... Minimum 2 clock cycles should be met before new RAS activation. 3. Please refer to Mode Register Set table. TM Technology Inc. reserves the right to change products or specifications without notice. Auto Refresh Cycle i fre sh P.28 T436416A ...

Page 29

... Dimension in inch Max Min Nom Max 1 0.047 0.6 0.016 0.020 0.024 - 0.006 0.40 0.009 0.012 0.016 - 0.0315 0.15 0.002 0.004 0.006 22.62 0.871 0.875 0.905 11.96 0.455 0.463 0.471 10.26 0.396 0.400 0.404 P. Publication Date: MAY. 2003 T436416A Revision: B ...

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