RFM12N18 Intersil Corporation, RFM12N18 Datasheet
RFM12N18
Related parts for RFM12N18
RFM12N18 Summary of contents
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... GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. © Copyright Harris Corporation 1998 RFM12N18, RFM12N20, RFP12N18, RFP12N20 12A, 180V and 200V, 0.250 Ohm, Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such ...
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... RFM12N18, RFM12N20, RFP12N18, RFP12N20 Absolute Maximum Ratings T C Drain to Source Voltage (Note Drain to Gate Voltage ( (Note 1 Continuous Drain Current Pulsed Drain Current (Note Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... RFM12N18, RFM12N20, RFP12N18, RFP12N20 Typical Performance Curves Unless Otherwise Specified 1.2 1.0 0.8 0.6 0.4 0 CASE TEMPERATURE ( C FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 (MAX) D CONTINUOUS 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON (MAX) 180V DSS RFM12N18, RFP12N18 V (MAX) 200V ...
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... RFM12N18, RFM12N20, RFP12N18, RFP12N20 Typical Performance Curves Unless Otherwise Specified (Continued 12A 10V D GS 1.5 1 0 100 T , JUNCTION TEMPERATURE ( J FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1600 1400 1200 C ISS 1000 800 600 C OSS 400 200 C RSS ...