IRF634FP STMicroelectronics, IRF634FP Datasheet

IRF634FP

Manufacturer Part Number

IRF634FP

Description

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET

Manufacturer

STMicroelectronics

Datasheets

1.IRF634FP.pdf (9 pages)

2.IRF634FP.pdf (9 pages)

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Price

Company:

Bonase Electronics (HK) Co., Limited

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IRF634FP

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Quantity:

50 000

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Bonase Electronics (HK) Co., Limited

Part Number:

IRF634FP

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Company:

Meier Automation Equipment Co., Limited

Part Number:

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Quantity:

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Part Number:

IRF634FP,IRF630FP��IRF634

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DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

July 2001

IRF634

IRF634FP

TYPICAL R

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

IDEAL FOR MONITOR’s B+ FUNCTION

dv/dt (1)

Symbol

DGR

TOT

ISO

stg

TYPE

( )

Drain-source Voltage (V

Drain-gate Voltage (R

Gate- source Voltage

Drain Current (continuos) at T

Drain Current (pulsed)

Total Dissipation at T

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

(on) = 0.38

250 V

N-CHANNEL 250V - 0.38 - 8A TO-220/TO-220FP

DSS

< 0.45

DS(on)

Parameter

= 25° C

= 20 k )

= 0)

= 25°C

= 100° C

8 A

(1) I

(*)Limited only by maximum temperature allowed

MESH OVERLAY™ MOSFET

INTERNAL SCHEMATIC DIAGRAM

8A, di/dt 300 A/ s, V

TO-220

IRF634

0.64

–65 to 150

Value

± 20

250

150

(BR)DSS

IRF634FP

, Tj T

TO-220FP

32(*)

2000

0.24

8(*)

5(*)

IRF634

jMAX

W/° C

Unit

V/ns

°C

1/9

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