IRF9520N International Rectifier, IRF9520N Datasheet

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IRF9520N

Manufacturer Part Number
IRF9520N
Description
Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Manufacturer
International Rectifier
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
0.32
-6.8
-4.8
-4.0
-5.0
± 20
140
-27
4.8
48
TO-220AB
IRF9520N
®
R
Power MOSFET
V
DS(on)
Max.
–––
DSS
3.1
62
I
D
= -6.8A
PD - 91521A
= -100V
= 0.48
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
5/13/98

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IRF9520N Summary of contents

Page 1

... CS R Junction-to-Ambient JA HEXFET Max. @ -10V -6 -10V -4.8 GS 0.32 -4.0 -5.0 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91521A IRF9520N ® Power MOSFET V = -100V DSS R = 0.48 DS(on -6.8A D TO-220AB Units A - W/°C ± 140 mJ A 4.8 mJ V/ns ° ...

Page 2

... IRF9520N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics, 2.5 -6. 2.0 ° 1.5 ° 1.0 0.5 0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRF9520N VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( -10V 100 120 140 160 180 ° ...

Page 4

... IRF9520N 800 1MHz iss rss oss ds gd 600 C iss 400 C oss C rss 200 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 175 C ° 0.1 0.2 0.8 1.4 -V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... -10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRF9520N D.U. µ d(off Notes: 1 ...

Page 6

... IRF9520N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 400 300 ...

Page 7

... Fig 14. For P-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF9520N + *** ...

Page 8

... IRF9520N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

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