IRFB16N60L International Rectifier, IRFB16N60L Datasheet
IRFB16N60L
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IRFB16N60L Summary of contents
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... SM Ã (Body Diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM t Forward Turn-On Time on www.irf.com SMPS MOSFET IRFB16N60L HEXFET V R DSS DS(on) 600V Max. @ 10V 10V 310 2.5 ± 150 300 (1.6mm from case ) 1 ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 12V 100 10V 9.0V 8.0V 7.0V 10 6.0V BOTTOM 5.0V 1 0.1 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...
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0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = iss 1000 C oss ...
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OPERATION IN THIS AREA LIMITED (on) 100 25° 150°C Single Pulse 0 100 Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area ≤ 1 ≤ ...
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D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.0 4.5 4.0 3.5 3.0 2.5 2.0 -75 -50 -25 Fig 13. ...
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Fig 14a. Maximum Avalanche Energy 15V D.U 20V 0.01 Ω Fig 14b. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 16. For N-Channel HEXFET 8 + • • ƒ • - „ • ...
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Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 3X 1.15 (.045) ...