IRFB16N60L International Rectifier, IRFB16N60L Datasheet - Page 4

• Manufacturer Part Number: IRFB16N60L
• Description: SMPS MOSFET
• Manufacturer: International Rectifier

100000
4
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
1
Fig 5. Typical Capacitance vs.
1
0
I D = 15A
Fig 7. Typical Gate Charge vs.
Drain-to-Source Voltage
10
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Q G Total Gate Charge (nC)
20
10
C rss
C oss
C iss
V DS = 480V
V DS = 300V
V DS = 120V
30
f = 1 MHZ
40
100
50
60
1000
70
100.00
10.00
1.00
0.10
25
20
15
10
5
0
Fig 8. Typical Source-Drain Diode
0.2
0
Fig 6. Typ. Output Capacitance
100
0.4
V DS, Drain-to-Source Voltage (V)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
Forward Voltage
Stored Energy vs. V
200
0.6
300
T J = 25°C
0.8
400
1.0
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500
1.2
DS
V GS = 0V
600
1.4
700
1.6