IRFI510 Fairchild Semiconductor, IRFI510 Datasheet

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IRFI510

Manufacturer Part Number
IRFI510
Description
Advanced Power MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
IRFI510A
Manufacturer:
IR
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IRFI510G
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Quantity:
12 500
©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
175
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10 A (Max.) @ V
Lower R
J
R
dv/dt
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
JC
D
JA
JA
L
C
STG
Operating Temperature
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.289
Junction-to-Ambient
Junction-to-Ambient
(Typ.)
Junction-to-Case
Characteristic
Characteristic
A
C
=25 )
=25 )
C
C
=25 )
=100 )
*
C
C
DS
C
*
= 100V
C
O
O
O
O
O
1
2
1
1
3
Typ.
--
--
--
- 55 to +175
IRFW/I510A
+ _
0.22
Value
100
300
1
5.6
5.6
3.3
6.5
3.8
20
63
33
20
BV
R
I
4
3
1. Gate 2. Drain 3. Source
D
D
DS(on)
2
-PAK
= 5.6 A
DSS
Max.
4.51
62.5
40
= 0.4
= 100 V
2
1
2
3
I
2
-PAK
Units
C/
Units
V/ns
W/
mJ
mJ
W
W
V
/W
A
A
V
A
C
Rev. B
C

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IRFI510 Summary of contents

Page 1

... Maximum Lead Temp. for Soldering T L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation = 100V DS Characteristic = =100 ) ...

Page 2

IRFW/I510A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

N-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4 Notes : 1. 250 ...

Page 4

IRFW/I510A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area 2 10 Operation in This Area is Limited ...

Page 5

N-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS 3mA R 1 Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 10V Fig 14. Unclamped ...

Page 6

IRFW/I510A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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