IRFI510 Fairchild Semiconductor, IRFI510 Datasheet - Page 4

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IRFI510

Manufacturer Part Number
IRFI510
Description
Advanced Power MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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IRFW/I510A
10
1.2
1.1
1.0
0.9
0.8
10
10
10
-1
2
1
0
-75
10
0
Fig 7. Breakdown Voltage vs. Temperature
-50
Fig 9. Max. Safe Operating Area
-25
T
V
J
Operation in This Area
is Limited by R
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
@ Notes :
10
1. T
2. T
3. Single Pulse
10
- 1
25
0
10
C
J
= 25
= 175
- 5
10
0.01
0.05
0.02
D=0.5
0.2
0.1
50
1
DS(on)
o
C
o
C
DC
75
10 ms
10
t
100
1
- 4
single pulse
1 ms
, Square Wave Pulse Duration
@ Notes :
125
1. V
2. I
o
C]
100 s
GS
D
150
= 250 A
= 0 V
Fig 11. Thermal Response
10
10
2
175
- 3
200
10
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 10. Max. Drain Current vs. Case Temperature
6
5
4
3
2
1
0
-75
25
@ Notes :
10
1. Z
2. Duty Factor, D=t
3. T
-50
Fig 8. On-Resistance vs. Temperature
P
DM
- 1
J M
50
-25
J C
-T
(t)=4.51
T
[sec]
C
J
=P
T
t
, Junction Temperature [
0
c
1
D M
t
, Case Temperature [
2
10
75
*Z
25
0
o
J C
C/W Max.
(t)
50
1
/t
100
POWER MOSFET
2
75
N-CHANNEL
10
1
100
125
@ Notes :
o
125
C]
1. V
2. I
o
C]
GS
D
150
= 2.8 A
150
= 10 V
175
200
175

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