SI2306DS-T1 Vishay Siliconix, SI2306DS-T1 Datasheet
SI2306DS-T1
Available stocks
Related parts for SI2306DS-T1
SI2306DS-T1 Summary of contents
Page 1
... Document Number: 70827 S-31873—Rev. C, 15-Sep-03 I (A) D 3.5 2.8 TO-236 (SOT-23 Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 = 25_C UNLESS OTHERWISE NOTED 25_C 70_C 25_C 70_C sec Steady State Si2306DS ...
Page 2
... Si2306DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance ...
Page 3
... 800 700 600 500 400 300 200 100 1.6 1.4 1.2 1.0 0.8 0 Si2306DS Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs ...
Page 4
... Si2306DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 - 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...