SI2306DS-T1 Vishay Siliconix, SI2306DS-T1 Datasheet - Page 3

• Manufacturer Part Number: SI2306DS-T1
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 70827
S-31873—Rev. C, 15-Sep-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.4
0.3
0.2
0.1
0.0
16
12
10
8
4
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.5 A
On-Resistance vs. Drain Current
= 15V
2
V
2
DS
Q
4
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
I
D
- Total Gate Charge (nC)
V
GS
GS
- Drain Current (A)
Gate Charge
= 4.5 V
4
4
= 10 thru 5 V
8
6
6
4 V
3 thru 1 V
12
V
GS
8
8
= 10 V
10
16
10
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
16
12
8
4
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 3.5 A
V
V
1
6
= 10 V
DS
GS
T
C
Transfer Characteristics
J
0
oss
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
12
2
25_C
T
C
50
C
iss
Vishay Siliconix
= 125_C
18
3
75
Si2306DS
100
24
4
- 55_C
www.vishay.com
125
150
30
5
3