SI2307DS Vishay Siliconix, SI2307DS Datasheet
SI2307DS
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SI2307DS Summary of contents
Page 1
... Maximum Junction-to-Ambient Notes a. Surface mounted on FR4 board sec. Document Number: 70843 S-60570—Rev. A, 16-Nov-98 I (A) D –3 –2 TO-236 (SOT-23 Top View Si2307DS (A7)* *Marking Code Symbol ...
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... Si2307DS Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V Gate-Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge ...
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... On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0 –50 Si2307DS Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss ...
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... Si2307DS Vishay Siliconix Source-Drain Diode Forward Voltage 10 150 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0 250 A D 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1.00 Duty Cycle = 0.5 0.2 0.1 0.10 0.05 0.02 Single Pulse 0.01 –4 –3 ...