SI2307DS Vishay Siliconix, SI2307DS Datasheet - Page 4

• Manufacturer Part Number: SI2307DS
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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2-4
Si2307DS
Vishay Siliconix
10.0
–0.2
–0.4
1.0
0.1
0.6
0.4
0.2
0.0
1.00
0.10
0.01
–50
0.0
2
10
–4
Duty Cycle = 0.5
Source-Drain Diode Forward Voltage
–25
0.2
0.1
0.05
0.02
0.2
V
T
SD
J
I
D
0
= 150 C
0.4
– Source-to-Drain Voltage (V)
= 250 A
Threshold Voltage
T
J
Single Pulse
– Temperature ( C)
10
25
–3
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
T
75
J
= 25 C
1.0
10
100
–2
1.2
125
Square Wave Pulse Duration (sec)
150
1.4
10
–1
1
12
10
1.0
0.8
0.6
0.4
0.2
8
6
4
2
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
0.1
V
2
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
10
Single Pulse Power
P
– Gate-to-Source Voltage (V)
Single Pulse
DM
JM
T
A
– T
= 25 C
I
A
D
4
t
1
1
= P
= –3 A
t
2
DM
Time (sec)
Z
thJA
thJA
100
6
(t)
10
t
t
1
2
S-60570—Rev. A, 16-Nov-98
= 130 C/W
Document Number: 70843
8
100
500
500
10