TP0610T Supertex Inc, TP0610T Datasheet
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TP0610T
Manufacturer Part Number
TP0610T
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0610T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Company:
Part Number:
TP0610T-T1
Manufacturer:
SAMSUNG
Quantity:
1
Part Number:
TP0610T-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Features
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Applications
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-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Complementary N- and P-channel devices
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic systems
Analog switches
Power management
Telecom switches
TP0610T
Device
ISS
and fast switching speeds
TO-236AB (SOT-23)
Package Options
TP0610T-G
P-Channel Enhancement Mode
Vertical DMOS FETs
-55°C to +150°C
+300°C
Value
BV
BV
±20V
DGS
DSS
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
Product Marking
BV
DSS
-60
(V)
/BV
DGS
T50W
TO-236AB (SOT-23) (T)
TO-236AB (SOT-23) (T)
DRAIN
W = Code for week sealed
R
(max)
DS(ON)
(Ω)
GATE
10
= “Green” Packaging
SOURCE
TP0610T
I
(min)
(mA)
D(ON)
-50