TP0610T Supertex Inc, TP0610T Datasheet - Page 4

no-image

TP0610T

Manufacturer Part Number
TP0610T
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheets

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0610T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
TP0610T-T1
Manufacturer:
SAMSUNG
Quantity:
1
Part Number:
TP0610T-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Typical Performance Curves
100
-2.0
-1.6
-1.2
-0.8
-0.4
1.1
1.0
0.9
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
-10
= -25V
0
Variation with Temperature
f = 1MHz
C
RSS
V
GS
V
-4
DS
T
(volts)
j
-20
50
(volts)
(°C)
-6
100
-30
(cont.)
-8
C
ISS
150
-10
-40
4
-10
1.2
1.1
1.0
0.9
0.8
0.7
20
16
12
-8
-6
-4
-2
8
4
0
V
0
-50
GS(th)
0
0
V
GS(th)
Gate Drive Dynamic Characteristics
and R
On-Resistance vs. Drain Current
V
35 pF
DS
-0.4
0.5
@ -1mA
V
GS
= -10V
0
DS(ON)
Q
= -4.5V
G
I
R
D
(nanocoulombs)
DS(ON)
-0.8
1.0
(amperes)
Variation with Temperature
T
j
50
(°C)
V
GS
@ -10V, -0.5A
-1.2
1.5
= -10V
V
125 pF
DS
100
-1.6
2.0
= -40V
-2.0
150
2.5
TP0610T
1.6
1.4
1.2
1.0
0.8

Related parts for TP0610T