2SK1062 Toshiba Semiconductor, 2SK1062 Datasheet - Page 2

• Manufacturer Part Number: 2SK1062
• Description: N CHANNEL MOS TYPE (HIGH SPEED SWTICHING/ ANALOG SWITCHING/ INTERFACE APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Characteristics
Rise time
Turn-on time
Fall time
Turn-off Time
(Ta = 25°C)
V
R
V
Symbol
(BR) DSS
DS (ON)
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
rss
t
t
iss
th
fs
r
f
⎪
V
V
I
V
V
I
I
V
V
V
V
D.U < = 1% (Z
D
D
D
GS
DS
DS
DS
DS
DS
DS
IN
= 1 mA, V
= 50 mA, V
= 50 mA, V
: t
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= ±10 V, V
r
, t
2
f
< 5 ns
Test Condition
out
GS
D
D
GS
GS
GS
GS
GS
GS
= 1 mA
= 50 mA
DS
= 50 Ω)
= 0
= 10 V
= 10 V
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
100
Min
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
Typ.
0.6
30
55
13
40
14
35
75
⎯
⎯
⎯
⎯
⎯
8
2007-11-01
±100
2SK1062
Max
3.5
1.0
10
50
65
18
50
⎯
⎯
⎯
⎯
⎯
Unit
mS
mV
nA
μA
pF
pF
pF
ns
Ω
V
V