2SK2125 Panasonic Semiconductor, 2SK2125 Datasheet

2SK2125

Manufacturer Part Number

2SK2125

Description

Silicon N-Channel Power F-MOS FET

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SK2125.pdf (3 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SK2125

Manufacturer:

PANASONIC

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SK2125

Manufacturer:

PANASONIC

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

2SK2125

Manufacturer:

MAT

Quantity:

20 000

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Power F-MOS FETs

2SK2125

Silicon N-Channel Power F-MOS FET

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Avalanche energy capacity

Allowable power

dissipation

Channel temperature

Storage temperature

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time (delay time)

Rise time

Fall time

Turn-off time (delay time)

Thermal resistance between channel and case

Avalanche energy capacity guaranteed: EAS > 15.6mJ

High-speed switching: t

No secondary breakdown

Contactless relay

Diving circuit for a solenoid

Driving circuit for a motor

Control equipment

Switching power supply

L = 5mH, I

Features

Applications

Absolute Maximum Ratings

Electrical Characteristics

GSS

= ±30V guaranteed

Parameter

= 2.5A, V

Pulse

Ta = 25°C

= 25°C

= 50V, 1 pulse

= 35ns

Symbol

EAS

Symbol

| Y

d(on)

d(off)

DSS

GSS

stg

DS(on)

iss

oss

rss

th(ch-c)

DSS

GSS

DSS

DSF

= 25°C)

55 to +150

Ratings

= 1mA, V

= 2.5A, V

= 400V, V

= ±30V, V

= 25V, I

= 10V, I

= 25V, I

= 20V, V

= 10V, I

±2.5

15.6

500

±30

±10

150

= 150V, R

Conditions

= 1mA

= 1.5A

= 0

= 0, f = 1MHz

= 100

= 0

Unit

°C

min

500

3.2±0.1

9.9±0.3

2 3

330

typ

3.2

1.5

5.08±0.4

1.45±0.15

2.54±0.2

0.75±0.1

1.2±0.15

3.125

max

0.1

±1

1.5

TO-220E Package

4.6±0.2

0.7±0.1

1: Gate

2: Drain

3: Source

2.9±0.2

2.6±0.1

unit: mm

°C/W

Unit

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2SK2125 Summary of contents

Page 1

... Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 15.6mJ V = ±30V guaranteed GSS High-speed switching 35ns f No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply ...

Page 2

... V ) Gate to source voltage 3.0 V =25V DS T =25˚C C 2.5 2.0 1.5 1.0 0 Drain current I D 2SK2125 EAS =50V DD I =2. 100 125 150 175 ( ˚C ) Junction temperature =25V ...

Page 3

... V GS 150 100 Gate charge amount th(t) (1) ( 2SK2125 d(on d(off) 16 150 14 125 12 100 0.5 1.0 1.5 2.0 Drain current =150V DD V ...

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