2SK2125 Panasonic Semiconductor, 2SK2125 Datasheet - Page 2

• Manufacturer Part Number: 2SK2125
• Description: Silicon N-Channel Power F-MOS FET
• Manufacturer: Panasonic Semiconductor

Power F-MOS FETs
2
0.3
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
12
10
3
1
0
8
6
4
2
0
0
0
Area of safe operation (ASO)
Drain to source voltage V
Drain to source voltage V
V
I
Non repetitive pulse
T
I
DP
D
GS
C
=25˚C
=10V
10
10
Drain current I
1
10ms
100ms
7V
R
6.5V
20
I
T
DS(on)
100˚C
D
25˚C
C
30
=150˚C
2
0˚C
30
V
100 s
100
DS
3
DC
40
I
D
D
5.5V
6V
( A )
V
1ms
T
40W
t=10 s
GS
4
300
DS
DS
C
50
=25˚C
=10V
5V
( V )
( V )
60
5
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0
5
4
3
2
1
0
0
0
0
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
20
2
Drain current I
1
40
25˚C
| Y
I
P
T
4
D
60
C
D
=0˚C
fs
2
(2)
(1)
(1) T
(2) Without heat sink
|
80 100 120 140 160
6
V
(P
Ta
C
GS
D
=Ta
3
I
=2W)
D
150˚C
D
8
100˚C
( A )
V
T
V
DS
C
GS
4
DS
=25˚C
10
=25V
=25V
( V )
12
5
0.01
100
0.1
24
20
16
12
10
8
4
0
6
5
4
3
2
1
0
1
25
0
0
Diode forward voltage V
Junction temperature T
Case temperature T
50
25
0.5
I
EAS
75
50
DR
V
th
100
1.0
75
V
T
2SK2125
DSF
T
125
C
100
j
1.5
C
V
I
V
I
D
D
DD
DS
=2.5A
=1mA
DSF
V
T
j
150
125
GS
C
=25V
( ˚C )
=50V
=25˚C
( ˚C )
=0
( V )
175
150
2.0