2SK2569 Hitachi Semiconductor, 2SK2569 Datasheet - Page 2

• Manufacturer Part Number: 2SK2569
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK2569
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltage drain current I
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes 1. Pulse Test
2
2. Marking is "ZN–"
10 s, duty cycle
Symbol
V
V
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
(BR)GSS
GS(off)
DS(on)1
DS(on)2
fs
|
1 %
Min
50
—
—
0.5
—
—
0.13
—
—
—
—
—
—
—
20
Symbol
V
V
I
I
Pch*
Tch
Tstg
Typ
—
—
—
—
—
2.0
3.1
0.23
14.0
17.2
1.73
40
86
1120
430
D
D(pulse)
DSS
GSS
2
*
1
Max
—
—
1.0
1.5
2.6
5.0
—
—
—
—
—
—
—
—
2.0
Unit
V
V
V
S
pF
pF
pF
A
A
s
s
s
s
Ratings
50
0.2
0.4
150
150
–55 to +150
20
Test Conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
V
R
D
G
D
D
D
D
DS
GS
GS
GS
DS
DS
GS
GS
L
= 100 A, V
= 100 A, V
= 10 A, V
= 100 mA
= 40 mA
= 100 mA
= 300
= 40 V, V
= 16 V, V
= 4 V*
= 2.5 V*
= 10 V
= 10 V
= 0
= 10 V, I
1
1
Unit
V
V
A
A
mW
D
DS
C
C
GS
= 100 mA
GS
DS
= 5 V
DS
= 0
= 0
= 0
= 0