2SK2569 Hitachi Semiconductor, 2SK2569 Datasheet - Page 3

• Manufacturer Part Number: 2SK2569
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

200
150
100
0.20
0.16
0.12
0.08
0.04
50
0
0
10 V 4 V
Drain to Source Voltage
Ambient Temperature
Pulse Test
Typical Output Characteristics
2.5 V
2
50
Maximum Channel
Dissipation Curve
4
100
V
6
GS
2.3 V
150
Ta (°C)
2 V
= 1.5 V
V
DS
8
(V)
200
10
0.003
0.001
0.03
0.01
0.20
0.16
0.12
0.08
0.04
0.3
0.1
1
0.1
0
Drain to Source Voltage
Ta = 25 C
Operation in
this area is
limited by R
Gate to Source Voltage
Maximum Safe Operation Area
Typical Transfer Characteristics
Tc = 75 C
0.3
1
1
DS(on)
2
3
25 C
–25 C
3
10
V
Pulse Test
V
DS
V
1 ms
2SK2569
DS
GS
30
4
= 5 V
(V)
(V)
100
5
3