2SK2926 Hitachi Semiconductor, 2SK2926 Datasheet - Page 3

• Manufacturer Part Number: 2SK2926
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltege drain
current
Gate to source leak current
Gate to source cutoff voltage V
Static drain to source on state R
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
Symbol
V
V
I
I
R
|y
Ciss
Coss
t
t
t
t
V
t
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Min
60
—
—
1.5
—
—
7
—
—
—
—
—
—
—
—
—
20
Typ
—
—
—
—
—
0.042
0.065
11
500
260
110
10
80
100
110
1.0
55
Max
—
—
10
2.5
0.055
0.11
—
—
—
—
—
—
—
—
—
—
10
2SK2926(L), 2SK2926(S)
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1MHz
V
R
I
I
diF/ dt = 50A/ s
D
G
D
D
D
D
F
F
DS
GS
DS
GS
GS
L
= 15A, V
= 15A, V
= 10mA, V
= 100 A, V
= 1mA, V
= 8A, V
= 8A, V
= 8A, V
= 3.75
= 60 V, V
= 10V
= 16V, V
= 0
= 10V, I
GS
GS
DS
GS
GS
DS
D
= 10V*
= 10V*
= 4V*
GS
GS
= 0
= 0
= 8A
DS
= 10V
DS
= 0
= 0
= 0
= 0
1
1
1
3