2SK2926 Hitachi Semiconductor, 2SK2926 Datasheet - Page 4

• Manufacturer Part Number: 2SK2926
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK2926(L), 2SK2926(S)
Main Characteristics
4
40
30
20
10
20
16
12
8
4
0
0
10 V
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
6 V 5 V
Pulse Test
2
50
4 .5 V
4
100
V
6
GS
Tc ( C)
= 2.5 V
150
V
3.5 V
DS
8
3 V
4 V
(V)
200
10
1000
300
100
0.3
0.1
30
10
20
16
12
3
1
8
4
0
0.1
Drain to Source Voltage
Gate to Source Voltage
Ta = 25 C
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
Operation in
this area is
limited by R
0.3
DS
1
= 10 V
Tc = 75 C
1
2
DS(on)
3
3
10
–25 C
25 C
V
V
GS
DS
4
30
(V)
(V)
100
5