2SK3397 Toshiba Semiconductor, 2SK3397 Datasheet
2SK3397
Manufacturer Part Number
2SK3397
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SK3397.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3397
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: Y
Low leakage current: I
Enhancement-model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Note 1: Please use devices on condition that the channel temperature
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic sensitive device. Please handle with caution.
is below 150°C.
R
temperature
Characteristics
DD
G
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅡ)
25
25 V, T
GS
DC
Pulse (Note 1)
(Tc
ch
DSS
20 k )
th
= 1.5 to 3.0 V (V
(Note 1)
(Note 2)
25°C (initial), L
= 10 µA (max) (V
25°C)
DS (ON)
Symbol
V
V
fs
V
E
E
T
T
I
I
DGR
P
DSS
GSS
I
DP
AR
AR
stg
AS
D
ch
D
R
2SK3397
Symbol
= 110 S (typ.)
th (ch-c)
DS
= 4.0 mΩ (typ.)
40 H, I
DS
= 10 V, I
= 30 V)
55 to150
AR
Rating
12.5
210
125
273
150
30
30
70
70
D
20
1
Max
= 1 mA)
1.0
70 A,
Unit
mJ
mJ
°C/W
°C
°C
W
V
V
V
A
A
Unit
Weight: 0.74 g (typ.)
JEDEC
JEITA
TOSHIBA
Circuit Configuration
1
2-9F1B
SC-97
2002-02-27
2SK3397
―
4
3
Unit: mm
Related parts for 2SK3397
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SK3397 Summary of contents
Page 1
... V GSS 210 DP P 125 273 12 150 ° to150 °C stg Symbol Max Unit R 1.0 °C/W th (ch- 2SK3397 Unit: mm JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Circuit Configuration 2002-02-27 ...
Page 2
... DRP DSF / ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2SK3397 Min Typ. Max 1.5 4.0 55 110 5000 1 MHz 550 1000 8.0 V OUT 25 R 0.43 L ...
Page 3
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 3 2SK3397 000707EAA 2002-02-27 ...