2SK3475 Toshiba Semiconductor, 2SK3475 Datasheet - Page 2

• Manufacturer Part Number: 2SK3475
• Description: VHF-and UHF-band Amplifier Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Output Power Test Fixture
(Test Condition: f = = = = 520 MHz, V
Drain cut-off current
Gate-source leakage current
Threshold voltage
Drain-source on-voltage
Forward transconductance
Input capacitance
Output capacitance
Output power
Drain efficiency
Power gain
Low voltage output power
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Z
P
G
i
= 50 W
Characteristics
C5
C1
C1: 10 pF
C2: 10 pF
C3: 9 pF
C4: 6 pF
C5: 2200 pF
C6: 2200 pF
C7: 10 mF
C8: 10000 pF
C9: 10 mF
C10: 10000 pF
C2
C7
(Ta = = = = 25°C)
L1
DS
R1
L3
V
GS
= = = = 7.2 V, I
V
Symbol
DS (ON)
L1: f0.8 mm enamel wire, 2.2ID, 1T
L2: f0.8 mm enamel wire, 2.2ID, 1T
L3: f0.8 mm enamel wire, 5.5ID, 4T
L4: f0.8 mm enamel wire, 5.5ID, 8T
I
I
C
C
P
DSS
GSS
V
Y
P
G
h
oss
iss
OL
th
fs
O
D
P
C8
idle
V
V
V
V
V
V
V
V
I
f = 520 MHz, P
V
I
f = 520 MHz, P
idle
idle
DS
GS
DS
GS
DS
DS
DS
DS
DS
= = = = 50 mA, P
2
= 50 mA (V
= 50 mA (V
= 20 V, V
= 7.2 V, I
= 7.2 V, I
= 7.2 V, V
= 7.2 V, V
= 7.2 V,
= 6.0 V,
= 10 V
= 10 V, I
C9
Test Condition
D
D
DS
GS
GS
GS
i
i
= 75 mA
GS
GS
= 2 mA
= 20 mW,
= 20 mW,
L4
= 208 mA
= 0 V
V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
i
= adjust),
= adjust),
DS
= = = = 20 mW)
L2
C10
C3
R1: 1.5 kW
C4
14.9
630
500
Min
1.9
45
¾
¾
¾
¾
¾
¾
C6
Typ.
12.5
260
Z
2.4
87
11
¾
¾
¾
¾
¾
¾
L
= 50 W
P
2002-01-09
2SK3475
Max
O
2.9
¾
¾
¾
¾
¾
¾
¾
¾
5
5
Unit
mW
mW
mV
mS
mA
mA
pF
pF
dB
%
V