2SK3560 Panasonic Semiconductor, 2SK3560 Datasheet

2SK3560

Manufacturer Part Number

2SK3560

Description

Silicon N-channel power MOSFET For PDP/For high-speed switching

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SK3560.pdf (3 pages)

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Power MOSFETs

2SK3560

Silicon N-channel power MOSFET

For PDP/For high-speed switching

■ Features

■ Absolute Maximum Ratings T

■ Electrical Characteristics T

Publication date: February 2004

• Low on-resistance, low Q

• High avalanche resistance

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Peak drain current

Power

dissipation

Channel temperature

Storage temperature

Gate-drain surrender voltage

Diode forward voltage

Gate threshold voltage

Drain-source cutoff current

Gate-source cutoff currentt

Drain-source on resistance

Forward transfer admittance

Short-circuit forward transfer capacitance

(Common-source)

Short-circuit output capacitance

(Common-source)

Reverse transfer capacitance

(Common-source)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Reverse recovery time

Reverse recovery charge

Parameter

= 25°C

Symbol

DSS

GSS

stg

= 25°C ± 3°C

Symbol

Y

DS(on)

d(off)

d(on)

DSS

GSS

DSS

DSF

= 25°C

oss

iss

rss

−55 to +150



Rating

±30

150

230

120

L = 230 µH, V

= 1 mA, V

≈ 6.7 Ω, V

= 30 A, V

= 15 A, di /dt = 100 A/ µs

SJG00033AED

= 25 V, I

= 184 V, V

= ±30 V, V

= 10 V, I

= 25 V, I

= 25 V, V

≈ 100 V, I

Unit

°C

Conditions

= 1 mA

= 15 A

= 0

= 10 V

= 15 A

= 0, f = 1 MHz

= 100 V

= 0

Internal Connection

1: Gate

2: Drain

3: Source

10.5

Min

230

±0.3

0.8

2.54

1.4

±0.1

2 330

±0.1

Typ

356

221

164

853

±0.3

TO-220C-G1 Package

2.5

Max

−1.5

100

±0.2

±1

(10.2)

4.6

(8.9)

±0.2

Unit: mm

1.4

0 to 0.3

Unit

mΩ

±0.1

µA

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2SK3560 Summary of contents

Page 1

... Power MOSFETs 2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Q g • High avalanche resistance ■ Absolute Maximum Ratings T Parameter Symbol Drain-source surrender voltage V Gate-source surrender voltage V Drain current Peak drain current Power = 25°C ...

Page 2

... Electrical Characteristics (Continued) T Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 3 10 Non repetitive pulse = 25°C ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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