2SK3560 Panasonic Semiconductor, 2SK3560 Datasheet - Page 2

• Manufacturer Part Number: 2SK3560
• Description: Silicon N-channel power MOSFET For PDP/For high-speed switching
• Manufacturer: Panasonic Semiconductor

2SK3560
■ Electrical Characteristics (Continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Total gate charge
Gate-source charge
Gate-drain charge
Channel-case heat resistance
Channel-atmosphere heat resistance
10
10
10
10
−1
1
3
2
1
I
I
DP
D
Drain-source voltage V
Safe operation area
Parameter
10
1 ms
10 ms
Non repetitive pulse
T
C
= 25°C
10
2
t = 100 µs
DS
( V )
10
3
Symbol
R
R
th(ch-c)
th(ch-a)
Q
Q
Q
gs
gd
g
100
80
60
40
20
0
0
(2)
(1)
V
V
Ambient temperature T
DD
GS
C
SJG00033AED
= 10 V
= 25°C ± 3°C
= 100 V, I
50
P
C
(1) T
(2) Without heat sink
 T
Conditions
C
D
= T
= 25 A
a
100
a
a
( °C )
150
Min
51.2
19.4
Typ
8.2
Max
89.2
2.5
°C/W
°C/W
Unit
nC
nC
nC