2SK3913-01MR Fuji Electric, 2SK3913-01MR Datasheet

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2SK3913-01MR

Manufacturer Part Number

2SK3913-01MR

Description

N-CHANNEL SILICO POWER MOSFET

Manufacturer

Fuji Electric

Datasheet

1.2SK3913-01MR.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2SK3913-01MR

Manufacturer:

NEC/RENESAS

Quantity:

12 500

Current page: 1 of 4
Download datasheet (95Kb)

www.fujielectric.co.jp/fdt/scd

2SK3913-01MR

Super FAP-G Series

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET

Drain-source voltage

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Maximum Avalanche current

Non-Repetitive

Maximum Avalanche Energy

Repetitive

Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

Max. Power Dissipation

Operating and Storage

Temperature range

Isolation Voltage

Item

Item

Drain-Source Breakdown Voltaget

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source On-State Resistance

Forward Transcondutance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time t

Turn-Off Time t

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Zero Gate Voltage Drain Current

Thermal resistance

Item

Thermalcharacteristics

Features

Maximum ratings and characteristic

Absolute maximum ratings

(Tc=25°C unless otherwise specified)

Electrical characteristics (T

High speed switching

No secondary breadown

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

on

off

c

V

V

I

I

V

I

E

E

dV

dV/dt

-di/dt

P

T

T

V

=25°C unless otherwise specified)

D

AR

D(puls]

AS

AR

D

ch

stg

DSX

GS

ISO

DS

Symbol

DS

R

R

Low on-resistance

DC-DC converters

Low driving power

Symbol

/dt

Symbol

BV

V

I

R

g

C

C

C

td

t

td

t

Q

Q

Q

V

t

Q

I

GSS

r

f

rr

th(ch-c)

th(ch-a)

DSS

fs

GS(th)

oss

DS(on)

iss

rss

G

GS

GD

SD

(on)

(off)

rr

DSS

-55 to +150

+150

Ratings

250

220

±56

±30

301.1

100

14

14

20

37

3.7

5

2.16

2

Test Conditions

V

V

R

Test Conditions

I

I

V

V

f=1MH

V

I

V

I

I

-di/dt=100A/µs

V

V

V

I

I

channel to ambient

channel to case

D

D

D

F

F

D

D

CC

GS

GS

DS

GS

GS

DS

DS

GS

CC

=14A V

=14A V

= 250 µ A

= 250 µ A

=14A

=7A

=7A

=48V I

=10V

=10

=250V V

=200V V

=±30V

=75V

=0V

=10V

=125V

V

V

mJ

kV/µs

kV/µs

A/µs

W

°C

°C

kVrms

mJ

Unit

V

V

A

A

V

A

GS

GS

DS

GS

D

V

=7A

=0V T

=10V

=25V

=0V

DS

GS

GS

V

V

DS

GS

=0V

=0V

=0V

T

V

Note *1

Note *2

Note *3

V

Note *4

Note *5

Tc=25°C

Ta=25°C

t=60sec f=60Hz

=V

=0V

ch

GS

DS

Remarks

ch

=25°C

GS

= <

=-30V

=25°C

250V

T

T

ch

ch

=125°C

=25°C

TO-220F

Note *1:Tch 150°C,Repetitive and Non-repetitive

Note *2:StartingTch=25°C,I

Note *3:Repetitive rating:Pulse width limited by

Note *4:I

Note *5:I

Outline Drawings

Equivalent circuit schematic

EAS limited by maximum channel temperature

See to the ‘Avalanche Energy’ graph

and avalanch current.

See to the ‘Transient Theemal impedance’

graph

V

maximum channel temperature.

F

F

= <

= <

Min.

CC

Min.

Gate(G)

-I

-I

250

=48V,R

= <

D

D

, -di/dt=100A/

, dv/dt=5kV/

3.0

5

G

Typ.

=50

Typ.

220

780

120

10

90

12

23

22

6.0

3

6

7.0

6.0

1.00

0.5

µ

AS

µ

s,V

=6A,L=14.1mH,

s,V

Source(S)

Drain(D)

CC

CC

1170

Max.

(mm)

= <

Max.

58

= <

100

280

135

250

BV

3.378

25

18

35

33

11

BV

5.0

2

9.0

4.5

9

9.0

1.50

1.25

DSS

DSS

,Tch 150°C

,Tch 150°C

Units

Units

200406

°C/W

°C/W

= <

ns

= <

V

V

µA

mA

nA

m

S

pF

nC

V

ns

µC

1

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