2SK3913-01MR Fuji Electric, 2SK3913-01MR Datasheet - Page 3

• Manufacturer Part Number: 2SK3913-01MR
• Description: N-CHANNEL SILICO POWER MOSFET
• Manufacturer: Fuji Electric

2SK3913-01MR
100p
10n
10p
10
10
10
10
1n
1p
7
6
5
4
3
2
1
0
10
3
2
1
0
10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
-50
-1
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(off)
td(on)
-1
tr
tf
-25
10
0
0
10
0
25
VDS [V]
ID [A]
10
Tch [ C]
50
1
max.
min.
75
10
1
10
100
2
125
Ciss
Coss
Crss
10
150
10
3
2
100
350
300
250
200
150
100
0.1
24
20
16
12
10
50
1
8
4
0
0
0.00
0
0
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25 C
I
I
I
AS
AS
AS
=5.6A
=8.4A
=14A
10
0.25
25
20
0.50
50
starting Tch [ C]
FUJI POWER MOSFET
200V
Qg [nC]
30
Vcc= 50V
250V
0.75
VSD [V]
75
40
1.00
100
50
1.25
125
60
1.50
150
70
3